Part Number | FQPF17P10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 100V 10.5A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 41W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 5.25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF17P10
ONSEMICON
1520
1.29
HK HEQING ELECTRONICS LIMITED
FQPF17P10
ON/ST
500000
2.365
VBsemi Electronics Co., Limited
FQPF17P10
ON/CMD
11620
3.44
N&S Electronic Co., Limited
FQPF17P10
ON/SANYO
190
4.515
Yingxinyuan INT'L (Group) Limited
FQPF17P10
ONSEM
1400
5.59
Cicotex Electronics (HK) Limited