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Description
DATASHEET Nov 1, 2013 Drain current limited by maximum junction temperature. Thermal Characteristics. Symbol. Parameter. FQP13N50C. FQPF13N50C . Units. VDSS. Source. TSC. Fairchild. Toshiba. AOS. TSM13N50ACI. FQPF13N50C . TK13A50DA. AOTF13N50. Closest Cross Reference: Ordering Information: Part Number. PFC Inductor. L7,L8. 10 mH. 1. Common Choke. L9. 12 H. 1. Output Inductor. Q2,Q3,Q5,Q6. FQPF13N50C . 4. Fairchild. Q4,Q15A,Q15,Q18. C1815. 4. SOT- 223. EC40. 1. PFC Inductor. L7,L8. 10 mH. 1. Common Choke. L9. 12 H. 1. Output Inductor. Q2,Q3,Q5,Q6. FQPF13N50C . 4. Q4,Q15A,Q15,Q18. C1815. 4. SOT-223 . Nov 5, 2009 ( FQPF13N50C ) are compared at startup state in the LLC resonant half bridge converter. Figure 20 presents key waveforms comparing reverse
| Part Number | FQPF13N50C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 500V 13A TO-220F |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2055pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Rds On (Max) @ Id, Vgs | 480 mOhm @ 6.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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