Part Number | FQPF12N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 5.8A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 55W (Tc) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 2.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF12N60
ONSEMICON
32365
0.2
HK HEQING ELECTRONICS LIMITED
FQPF12N60
ON/ST
29000
1.1475
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF12N60
ON/CMD
33151
2.095
ATLANTIC TECHNOLOGY LIMITED
FQPF12N60
ON/SANYO
1000
3.0425
Yingxinyuan INT'L (Group) Limited
FQPF12N60
ONSEM
3185
3.99
Cicotex Electronics (HK) Limited