Part Number | FQPF10N60CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 9.5A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2040pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.75A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF10N60CT
ONSEMICON
4480
1.37
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF10N60CT
ON/ST
5707
2.38
Ysx Tech Co., Limited
FQPF10N60CT
ON/CMD
723
3.39
MY Group (Asia) Limited
FQPF10N60CT**
ON/SANYO
1639
4.4
N&S Electronic Co., Limited
FQPF10N60CT
ONSEM
5725
5.41
ATLANTIC TECHNOLOGY LIMITED