Description
Datasheet FQP9N50 . 500V N Channel MOSFET. General Description. These N Channel enhancement mode power field effect transistors are produced using Fairchild,s www.fairchildsemi.com. REV. 1.2.3 11/2/04. Features. Internally synchronized PFC and PWM in one 8-pin IC input current shaping technique. Peak or Application Note 9015. A180W, 100KHz Forward Converter Using QFET by I.S. Yang. 1. July, 2000. Rev. B, July 2000. Introduction. The inherent performance Application Note 6004. 500W Power-Factor-Corrected (PFC) Converter Design with FAN4810 www.fairchildsemi.com. REV. 1.0.1 10/31/03. This application RDS(ON) Max. ( ) @ VGS = 10V. QG Typ. (nC) @ VGS = 10V. ID (A). PD (W). Package. FDPF7N50. N. 500. Single. 0.9. 12.8. 7. 39. TO-220F. FQP9N50 . N. 500 .
Part Number | FQP9N50 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 9A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 147W (Tc) |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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