(5/5) based on 2 customer reviews
Description
Datasheet Apr 1, 2014 62.5. C/W. * Drain current limited by maximum junction temperature. Symbol. Parameter. FQP8N60C . Unit. VDSS. Drain-Source Voltage. 600. Aug 9, 2014 FQP8N60C . TO-220-3. (92.5-5-2.5DA_AlBW). INTERNAL SUZHOU. 2.030182 g. Each. Terminal Finish. Base Alloy. J-STD-020 MSL Rating. 500uH. Inductor, 8RHB2 type, 0.5A. 0.315 DIA inch. 822MY-xxxx. Toko. 1. Q1. FQP8N60C . Transistor, NFET, 600V, 8A. TO-220AB. FQP8N60C . Fairchild. 3. R1. FQP8N60C . R3. 1M. R12. 10. 10nF. C8. R1. 1M. PMP3661. 5. +. 6. -. 7. OUT. U3: B. TL103WID. C12. 2.2uF. D6. UF5404. FR107. D7. 100. R19. 10nF. C10. R24. Sep 26, 2008 0805+/-5%. ZD2. 15V. R32. 1K . 0805+/-5%. BD1. KBP206G. IC. MOSFET. U1. FAN6751MR. Fairchild. Q1. FQP8N60C . Fairchild. U2. PC817.
| Part Number | FQP8N60C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 600V 7.5A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 147W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
Hot Offer
FQP8N60C
ONSEMICON
100000
0.41
JI Sheng (HK) Electronics Co., Limited
FQP8N60C
ON/ST
1000
1.295
RX ELECTRONICS LIMITED
FQP8N60C
ON/CMD
200000
2.18
Shenzhen WTX Capacitor Co., Ltd.
FQP8N60C
ON/SANYO
639
3.065
WIN AND WIN ELECTRONICS LIMITED
FQP8N60C
ONSEM
1000
3.95
HONG KONG HORNG SHING LIMITED
