Description
Jul 12, 2016 FQP7N80C . TO220-3 (92.5-5-. 2.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish.
Part Number | FQP7N80C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 6.6A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 167W (Tc) |
Rds On (Max) @ Id, Vgs | 1.9 Ohm @ 3.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
Hot Offer
FQP7N80C
ONSEMICON
100000
0.18
JI Sheng (HK) Electronics Co., Limited
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ON/ST
1000
0.8475
RX ELECTRONICS LIMITED
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200000
1.515
Shenzhen WTX Capacitor Co., Ltd.
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10000
2.1825
HONG KONG HORNG SHING LIMITED
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1000
2.85
Xinye International Technology Limited