Part Number | FQP6N90C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 900V 6A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1770pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 167W (Tc) |
Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
FQP6N90C
ONSEMICON
8267
0.54
Superior Electronics Limited
FQP6N90C
ON/ST
535
1.9725
HK FEILIDI ELECTRONIC CO., LIMITED
FQP6N90C
ON/CMD
7575
3.405
JI Sheng (HK) Electronics Co., Limited
FQP6N90C
ON/SANYO
7074
4.8375
HK JDW ELECTRONIC CO., LIMITED
FQP6N90C
ONSEM
8462
6.27
LYT (HONGKONG) CO., LIMITED