Part Number | FQP6N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 6.2A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 3.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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FQP6N60
ONSEMICON
7130
0.74
Finestock Electronics HK Limited
FQP6N60
ON/ST
389
1.6025
Analog Technology Limited
FQP6N60
ON/CMD
8789
2.465
C & I Semiconductors Co., Limited
FQP6N60
ON/SANYO
1113
3.3275
MY Group (Asia) Limited
FQP6N60
ONSEM
5602
4.19
ALPINE ELECTRONICS LTD