Part Number | FQP6N50C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 5.5A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 98W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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FQP6N50C
ONSEMICON
86755
0.27
Bonase Electronics (HK) Co., Limited
FQP6N50C
ON/ST
1000
1.5
MY Group (Asia) Limited
FQP6N50C
ON/CMD
1885
2.73
Hongkong K.L.N Electronic Technology Co., Ltd.
FQP6N50C
ON/SANYO
28000
3.96
ZHW High-tech (HK) Co., Limited
FQP6N50
ONSEM
20000
5.19
C & I Semiconductors Co., Limited