Part Number | FQP6N25 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 250V 5.5A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 2.75A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP6N25
ONSEMICON
7799
0.55
HK HEQING ELECTRONICS LIMITED
FQP6N25
ON/ST
2868
1.58
MY Group (Asia) Limited
FQP6N25**
ON/CMD
7694
2.61
N&S Electronic Co., Limited
FQP6N25
ON/SANYO
5169
3.64
Yataitong Electronic Technology Co., Limited
FQP6N25
ONSEM
1014
4.67
Cicotex Electronics (HK) Limited