Description
2000 Fairchild Semiconductor International. Rev. A, April 2000. FQP63. 0. QFETTM. FQP630. 200V N Channel MOSFET. General Description. These N
Part Number | FQP630TSTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 9A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 78W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP630TSTU
ONSEMICON
1900
0.88
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQP630TSTU
ON/ST
20000
1.1825
Finestock Electronics HK Limited
FQP630TSTU
ON/CMD
1000
1.485
MY Group (Asia) Limited
FQP630TSTU
ON/SANYO
18000
1.7875
MASSTOCK ELECTRONICS LIMITED
FQP630TSTU
ONSEM
50
2.09
Jinmingsheng Technology (HK) Co.,Limited