Part Number | FQP630 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 9A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 78W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
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FQP630
ONSEMICON
9241
0.44
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQP630
ON/ST
5039
1.495
Finestock Electronics HK Limited
FQP630
ON/CMD
1491
2.55
HK Xinyuhang Electronic Co.,Ltd
FQP630
ON/SANYO
3050
3.605
Ande Electronics Co., Limited
FQP630
ONSEM
256
4.66
MY Group (Asia) Limited