Description
Apr 28, 2015 FQP5N60C . FQP5N60C . TO220-3 (92.5-5-. 2.5DA_AlBW).csv. Apr 28, 2015. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Aug 8, 2014 FQP5N60C . TO-220-3. (92.5-5-2.5DA_AlBW). SUZHOU. INTERNAL. SUZHOU. 2.0301822. Not. Applicable. Terminal. Finish. Base Alloy. . HFP5N60. . FQP5N60C . N-Channel Enhancement Mode Field Effect Transistor. . .
Part Number | FQP5N60C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 4.5A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
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