Part Number | FQP55N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 55A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1690pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 133W (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 27.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP55N06
ONSEMICON
32365
1.87
HK HEQING ELECTRONICS LIMITED
FQP55N06
ON/ST
5000
2.4425
G Trader Limited
FQP55N06
ON/CMD
1000
3.015
MY Group (Asia) Limited
FQP55N06
ON/SANYO
92858
3.5875
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQP55N06
ONSEM
5876
4.16
Analog Technology Limited