Part Number | FQP4N20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 3.6A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP4N20
ONSEMICON
10016
0.17
HK HEQING ELECTRONICS LIMITED
FQP4N20
ON/ST
14240
1.6375
ATLANTIC TECHNOLOGY LIMITED
FQP4N20
ON/CMD
1050
3.105
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQP4N20
ON/SANYO
35789
4.5725
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQP4N20
ONSEM
39
6.04
Yingxinyuan INT'L (Group) Limited