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Description
May 1, 2001 FQP30N06L . 60V LOGIC N-Channel MOSFET. General Description. These N- Channel enhancement mode power field effect transistors are The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the. MegaFET process. This process, which Product Overview. FQP30N06L : N-Channel QFET MOSFET 60V, 32A, 35m . For complete documentation, see the data sheet. This N-Channel enhancement Oct 24, 2011 INTRODUCTION TO IGBT. The Insulated Gate Bipolar transistor (IGBT) is a cross between a MOSFET (metal oxide semiconductor field effect. FQP30N06 : N-Channel QFET MOSFET 600V, 30A, 40m . For complete documentation, see the data sheet. This N-Channel enhancement mode power
| Part Number | FQP30N06L |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 60V 32A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 16A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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