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Description
Product Overview. FQP30N06 : N-Channel QFET MOSFET 600V, 30A, 40m . For complete documentation, see the data sheet. This N-Channel enhancement Jan 13, 2017 FQP30N06 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. FSSZ. 2.03301. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Sep 15, 2009 Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- May 1, 2001 These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.
| Part Number | FQP30N06 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 60V 30A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 945pF @ 25V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 15A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
FQP30N06
ONSEMICON
15
1.35
FLOWER GROUP(HK)CO.,LTD
FQP30N06
ON/ST
100
2.3725
E-star Trading Enterprise Limited
FQP30N06
ON/CMD
5000
3.395
Belt (HK) Electronics Co
FQP30N06
ON/SANYO
9000
4.4175
SUMMER TECH(HK) LIMITED
FQP30N06
ONSEM
25612
5.44
Yingxinyuan INT'L (Group) Limited
