Part Number | FQP2N60C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 2A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 54W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
Hot Offer
FQP2N60C
ONSEMICON
100000
1.12
JI Sheng (HK) Electronics Co., Limited
FQP2N60C
ON/ST
10000
2.4675
Hong Kong Capital Industrial Co.,Ltd
FQP2N60C
ON/CMD
268
3.815
WIN AND WIN ELECTRONICS LIMITED
FQP2N60C
ON/SANYO
195
5.1625
WIN AND WIN ELECTRONICS LIMITED
FQP2N60C
ONSEM
2167
6.51
HK ZHIRUI ELECTRONICS LIMITED