Description
Datasheet Nov 1, 2013 G. S. D. Absolute Maximum Ratings TC = 25 C unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQP22N30 . Unit. VDSS. Jan 8, 2016 FQP22N30 . TO220-3 (93.5-5-. 1.5DA_AlBW). Jan 08, 2016. 1.0. FSSZ. 2.033009 g. Each. Manufacturing Process Information. Terminal Finish. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP22N30 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ.
Part Number | FQP22N30 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 300V 21A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 10.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP22N30
ONSEMICON
658
1.31
HK HEQING ELECTRONICS LIMITED
FQP22N30
ON/ST
2800
2.1975
HXY Electronics (HK) Co.,Limited
FQP22N30
ON/CMD
1000
3.085
HK FEILIDI ELECTRONIC CO., LIMITED
FQP22N30
ON/SANYO
458600
3.9725
Shenzhen WTX Capacitor Co., Ltd.
FQP22N30
ONSEM
4000
4.86
Nosin (HK) Electronics Co.