Part Number | FQP1N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 1.2A TO-220 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 600mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP1N60
ONSEMICON
16000
1.41
Finestock Electronics HK Limited
FQP1N60
ON/ST
1393
2.3075
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQP1N60
ON/CMD
2506
3.205
ATLANTIC TECHNOLOGY LIMITED
FQP1N60
ON/SANYO
24055
4.1025
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQP1N60
ONSEM
203
5
Yingxinyuan INT'L (Group) Limited