Description
Jul 14, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP19N20 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. Jan 8, 2016 FQP19N20 . TO220-3 (93.5-5-. 1.5DA_AlBW). Jan 08, 2016. 1.0. FSSZ. 2.033009 g. Each. Manufacturing Process Information. Terminal Finish.
Part Number | FQP19N20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 19.4A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 19.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 9.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP19N20
ONSEMICON
2546
1.4
HK HEQING ELECTRONICS LIMITED
FQP19N20
ON/ST
10000
2.63
Hong Kong Capital Industrial Co.,Ltd
FQP19N20
ON/CMD
9000
3.86
SUMMER TECH(HK) LIMITED
FQP19N20
ON/SANYO
200000
5.09
Shenzhen WTX Capacitor Co., Ltd.
FQP19N20
ONSEM
1433
6.32
WIN AND WIN ELECTRONICS LIMITED