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Description
Nov 1, 2013 G. S. D. Absolute Maximum Ratings TC = 25 C unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQP17N40 . Unit. VDSS. Mar 24, 2015 FQP17N40 . FQP17N40 . TO220-3 (93.5-5-. 1.5DA_AlBW).csv. Mar 24, 2015. 1.0. FSSZ. 2.033009 g. Each. Manufacturing Process Information. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP17N40 . TO220-3 (93.5-5-1.5DA_AlBW).csv. FSSZ. FSSZ. 2.033009. Aug 3, 2001 FQP17N40 . Fairchild. NTB15N40T4. FQP17N40 . Fairchild. NTP15N40. FQP17N40 . Fairchild. NTD6N40. FQI6N40. Fairchild. NTD6N40-001.
| Part Number | FQP17N40 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 400V 16A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
FQP17N40
ONSEMICON
4531
0.93
SUNTOP SEMICONDUCTOR CO., LIMITED
FQP17N40
ON/ST
29618
2.12
HK HEQING ELECTRONICS LIMITED
FQP17N40
ON/CMD
5000
3.31
Ande Electronics Co., Limited
FQP17N40
ON/SANYO
9000
4.5
SUMMER TECH(HK) LIMITED
FQP17N40 MOS()
ONSEM
4950
5.69
CIS Ltd (CHECK IC SOLUTION LIMITED)
