Description
Jan 13, 2017 FQP13N10 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ. FSSZ. 2.03301. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Jul 12, 2016 FQP13N10 . TO220-3 (93.5-5-. 1.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.03301 g. Each. Manufacturing Process Information. Terminal Finish.
Part Number | FQP13N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 12.8A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 12.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 65W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 6.4A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP13N10
ONSEMICON
30000
0.43
QUARKTWIN TECHNOLOGY LIMITED
FQP13N10
ON/ST
10000
1.4475
Hong Kong Capital Industrial Co.,Ltd
FQP13N10
ON/CMD
29424
2.465
LIXINC Electronics Co., Limited
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ON/SANYO
458600
3.4825
Shenzhen WTX Capacitor Co., Ltd.
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ONSEM
10000
4.5
Belt (HK) Electronics Co