Part Number | FQP12N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 10.5A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 5.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP12N60
ONSEMICON
16000
0.94
Finestock Electronics HK Limited
FQP12N60
ON/ST
9999
1.63
ShenZhen XinChi TianCheng Technology Co,.Ltd
FQP12N60
ON/CMD
220360
2.32
Cinty Int'l (HK) Industry Co., Limited
FQP12N60
ON/SANYO
30000
3.01
Bonase Electronics (HK) Co., Limited
FQP12N60
ONSEM
85
3.7
Yingxinyuan INT'L (Group) Limited