Description
DATASHEET Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP11P06 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ.
Part Number | FQP11P06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 60V 11.4A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 53W (Tc) |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
FQP11P06
ONSEMICON
90984
1.79
Heisener Electronics Limited
FQP11P06
ON/ST
16000
3.0375
Finestock Electronics HK Limited
FQP11P06
ON/CMD
1157
4.285
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQP11P06
ON/SANYO
22087
5.5325
Yingxinyuan INT'L (Group) Limited
FQP11P06
ONSEM
54700
6.78
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED