Rated 
(5/5) based on 10 customer reviews
(5/5) based on 10 customer reviews
Description
Datasheet Nov 1, 2013 MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQP10N20C . FQPF10N20C. Unit. Aug 8, 2014 FQP10N20C . TO-220-3. (93.5-5-1.5DA_AlBW). SUZHOU. INTERNAL. SUZHOU. 2.0330090. Not. Applicable. Terminal. Finish. Base Alloy. Aug 9, 2014 FQP10N20C . TO-220-3. (93.5-5-1.5DA_AlBW). INTERNAL SUZHOU. 2.033009 g . Each. Terminal Finish. Base Alloy. J-STD-020 MSL Rating.
| Part Number | FQP10N20C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 200V 9.5A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 4.75A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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