Part Number | FQI9N50CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 9A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 135W (Tc) |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI9N50CTU
ONSEMICON
8581
0.87
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQI9N50CTU
ON/ST
1914
2.175
ATLANTIC TECHNOLOGY LIMITED
FQI9N50CTU
ON/CMD
6380
3.48
Gallop Great Holdings (Hong Kong) Limited
FQI9N50CTU
ON/SANYO
1843
4.785
Yingxinyuan INT'L (Group) Limited
FQI9N50CTU
ONSEM
3103
6.09
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED