Part Number | FQI9N08TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 80V 9.3A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 4.65A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI9N08TU
ONSEMICON
1000
1.23
MY Group (Asia) Limited
FQI9N08
ON/ST
20000
1.84666666666667
C & I Semiconductors Co., Limited
FQI9N08LTU
ON/CMD
1000
2.46333333333333
MY Group (Asia) Limited
FQI9N08
ON/SANYO
5000
3.08
Hua Sun Tak (HK) Limited