Part Number | FQI7N60TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 7.4A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1430pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 142W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 3.7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI7N60TU
ONSEMICON
1000
1.1
HK HEQING ELECTRONICS LIMITED
FQI7N60TU
ON/ST
33800
1.96
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQI7N60TU
ON/CMD
12000
2.82
Ande Electronics Co., Limited
FQI7N60TU
ON/SANYO
1250
3.68
Cicotex Electronics (HK) Limited
FQI7N60TU
ONSEM
9000
4.54
SUMMER TECH(HK) LIMITED