Part Number | FQI7N10LTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 7.3A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 3.65A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI7N10LTU
ONSEMICON
20000
0.9
Finestock Electronics HK Limited
FQI7N10LTU
ON/ST
1000
1.5325
MY Group (Asia) Limited
FQI7N10LTU
ON/CMD
18000
2.165
MASSTOCK ELECTRONICS LIMITED
FQI7N10TU
ON/SANYO
20000
2.7975
Finestock Electronics HK Limited
FQI7N10TU
ONSEM
1000
3.43
MY Group (Asia) Limited