Part Number | FQI5N60CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 4.5A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 100W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI5N60CTU
ONSEMICON
18650
0.18
Fairstock HK Limited
FQI5N60CTU
ON/ST
5000
0.985
HK HEQING ELECTRONICS LIMITED
FQI5N60CTU
ON/CMD
55200
1.79
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQI5N60CTU
ON/SANYO
9000
2.595
SUMMER TECH(HK) LIMITED
FQI5N60CTU
ONSEM
2000
3.4
Yingxinyuan INT'L (Group) Limited