Part Number | FQI5N20LTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 4.5A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI5N20LTU
ONSEMICON
3141
1.6
Finestock Electronics HK Limited
FQI5N20LTU
ON/ST
6786
2.165
MY Group (Asia) Limited
FQI5N20LTU
ON/CMD
6303
2.73
MASSTOCK ELECTRONICS LIMITED
FQI5N20L
ON/SANYO
7951
3.295
Dedicate Electronics (HK) Limited
FQI5N20TU
ONSEM
6747
3.86
MY Group (Asia) Limited