Part Number | FQI4N80TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 3.9A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) |
Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.95A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI4N80TU
ONSEMICON
1100
0.91
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQI4N80TU
ON/ST
20000
2.2575
Finestock Electronics HK Limited
FQI4N80TU
ON/CMD
1667
3.605
Hongkong Rixin International Trading Company
FQI4N80TU
ON/SANYO
1167
4.9525
Acon Electronics Limited
FQI4N80TU
ONSEM
14000
6.3
MY Group (Asia) Limited