Part Number | FQI3P50TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 500V 2.7A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
Rds On (Max) @ Id, Vgs | 4.9 Ohm @ 1.35A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI3P50TU
ONSEMICON
3570
1.84
Finestock Electronics HK Limited
FQI3P50TU
ON/ST
9829
3.1125
Top Electronics Co.,
FQI3P50TU
ON/CMD
3982
4.385
MY Group (Asia) Limited
FQI3P50TU
ON/SANYO
4394
5.6575
Cicotex Electronics (HK) Limited
FQI3P50TU
ONSEM
9372
6.93
MASSTOCK ELECTRONICS LIMITED