Description
Datasheet Nov 1, 2013 November 2013. Thermal Characteristics. FQB34P10. P-Channel QFET MOSFET. 100 V, -33.5 A, 60 m . Description. 2000 Fairchild
Part Number | FQI34P10TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 100V 33.5A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 33.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2910pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 16.75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI34P10TU
ONSEMICON
20000
1.58
Finestock Electronics HK Limited
FQI34P10TU
ON/ST
2000
2.5525
FLOWER GROUP(HK)CO.,LTD
FQI34P10TU
ON/CMD
1000
3.525
MY Group (Asia) Limited
FQI34P10TU
ON/SANYO
18000
4.4975
MASSTOCK ELECTRONICS LIMITED
FQI34P10
ONSEM
1083
5.47
CIS Ltd (CHECK IC SOLUTION LIMITED)