Part Number | FQI32N12V2TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 120V 32A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1860pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 150W (Tc) |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI32N12V2TU
ONSEMICON
20000
0.7
Finestock Electronics HK Limited
FQI32N12V2TU
ON/ST
1000
1.545
MY Group (Asia) Limited
FQI32N12V2TU
ON/CMD
18000
2.39
MASSTOCK ELECTRONICS LIMITED
FQI32N12V2TU
ON/SANYO
592
3.235
Hongkong K.L.N Electronic Technology Co., Ltd.
FQI32N20CTU
ONSEM
1000
4.08
MY Group (Asia) Limited