Part Number | FQI2N80TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 2.4A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
Rds On (Max) @ Id, Vgs | 6.3 Ohm @ 900mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI2N80TU
ONSEMICON
30000
1.58
Bonase Electronics (HK) Co., Limited
FQI2N80TU
ON/ST
33951
2.035
ATLANTIC TECHNOLOGY LIMITED
FQI2N80TU
ON/CMD
1000
2.49
MY Group (Asia) Limited
FQI2N80TU
ON/SANYO
33000
2.945
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQI2N80
ONSEM
12550
3.4
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED