Part Number | FQI17N08LTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 80V 16.5A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 65W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 8.25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI17N08LTU
ONSEMICON
1000
0.4
MY Group (Asia) Limited
FQI17N08
ON/ST
5000
0.735
G Trader Limited
FQI17N08
ON/CMD
5876
1.07
Analog Technology Limited
FQI17N08
ON/SANYO
20000
1.405
C & I Semiconductors Co., Limited
FQI17N08TU
ONSEM
1000
1.74
MY Group (Asia) Limited