Part Number | FQI13N50CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 500V 13A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2055pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 195W (Tc) |
Rds On (Max) @ Id, Vgs | 480 mOhm @ 6.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI13N50CTU
ONSEMICON
1046
0.42
HK HEQING ELECTRONICS LIMITED
FQI13N50CTU
ON/ST
42580
1.16
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQI13N50CTU
ON/CMD
1000
1.9
HONG KONG HORNG SHING LIMITED
FQI13N50CTU
ON/SANYO
5000
2.64
Nosin (HK) Electronics Co.
FQI13N50CTU
ONSEM
12046
3.38
N&S Electronic Co., Limited