Part Number | FQI13N06LTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 60V 13.6A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 13.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 6.8A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI13N06LTU
ONSEMICON
1000
0.35
MY Group (Asia) Limited
FQI13N06LTU
ON/ST
18000
1.1925
MASSTOCK ELECTRONICS LIMITED
FQI13N06LTU
ON/CMD
2955
2.035
Hongkong K.L.N Electronic Technology Co., Ltd.
FQI13N50CTU
ON/SANYO
5000
2.8775
Nosin (HK) Electronics Co.
FQI13N50CTU
ONSEM
1523
3.72
Hongkong Rixin International Trading Company