Part Number | FQI12N60TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 10.5A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 180W (Tc) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 5.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI12N60TU
ONSEMICON
18000
0.04
MASSTOCK ELECTRONICS LIMITED
FQI12N60TU
ON/ST
1100
1.5825
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQI12N60TU
ON/CMD
3875
3.125
Riking Technology (HK) Co., Limited
FQI12N60TU
ON/SANYO
1000
4.6675
MY Group (Asia) Limited
FQI12N60TU
ONSEM
627
6.21
Hongkong K.L.N Electronic Technology Co., Ltd.