Part Number | FQI10N60CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 9.5A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2040pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.75A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI10N60CTU
ONSEMICON
1000
0.82
MY Group (Asia) Limited
FQI10N60CTU
ON/ST
16000
1.7125
Finestock Electronics HK Limited
FQI10N60CTU
ON/CMD
18650
2.605
Fairstock HK Limited
FQI10N20CTU
ON/SANYO
1000
3.4975
MY Group (Asia) Limited
FQI10N20CTU
ONSEM
60
4.39
Yingxinyuan INT'L (Group) Limited