Part Number | FQE10N20LCTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 4A TO-126 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 12.8W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-126 |
Package / Case | TO-225AA, TO-126-3 |
Image |
FQE10N20LCTU
ONSEMICON
1000
0.85
MY Group (Asia) Limited
FQE10N20LCTU
ON/ST
18000
1.7125
MASSTOCK ELECTRONICS LIMITED
FQE10N20CTU
ON/CMD
1000
2.575
MY Group (Asia) Limited
FQE10N20CTU
ON/SANYO
18000
3.4375
MASSTOCK ELECTRONICS LIMITED
FQE10N20CTU
ONSEM
720
4.3
ICK Internation (HK) Co., Limited