Part Number | FQD7N10TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 5.8A DPAK |
Series | QFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 2.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD7N10TM
ONSEMICON
2500
1.29
HK HEQING ELECTRONICS LIMITED
FQD7N10TM
ON/ST
3500
2.2525
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQD7N10TM
ON/CMD
5500
3.215
Cicotex Electronics (HK) Limited
FQD7N10TM
ON/SANYO
34900
4.1775
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQD7N10TM
ONSEM
20000
5.14
Yingxinyuan INT'L (Group) Limited