Part Number | FQD6N60CTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 4A DPAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 80W (Tc) |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD6N60CTM
ONSEMICON
1503
0.17
Finestock Electronics HK Limited
FQD6N60CTM
ON/ST
5974
0.745
Yingxinyuan INT'L (Group) Limited
FQD6N60CTM
ON/CMD
6110
1.32
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQD6N60CTM
ON/SANYO
6518
1.895
Ande Electronics Co., Limited
FQD6N60CTM_WS
ONSEM
7177
2.47
CIS Ltd (CHECK IC SOLUTION LIMITED)