Part Number | FQD4N20LTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 200V 3.2A DPAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 1.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD4N20LTM
ONSEMICON
16000
0.68
Finestock Electronics HK Limited
FQD4N20LTM
ON/ST
55300
1.7
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQD4N20LTM
ON/CMD
36000
2.72
CIS Ltd (CHECK IC SOLUTION LIMITED)
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ON/SANYO
10158
3.74
Viassion Technology Co., Limited
FQD4N20LTM
ONSEM
20000
4.76
Yingxinyuan INT'L (Group) Limited