Part Number | FQD2N60CTF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 1.9A DPAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 950mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD2N60CTF
ONSEMICON
16000
1.42
Finestock Electronics HK Limited
FQD2N60CTF
ON/ST
220360
2.0975
Cinty Int'l (HK) Industry Co., Limited
FQD2N60CTF
ON/CMD
20000
2.775
Yingxinyuan INT'L (Group) Limited
FQD2N60CTF
ON/SANYO
27011
3.4525
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQD2N60CTF
ONSEM
42288
4.13
N&S Electronic Co., Limited