Part Number | FQD2N30TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 300V 1.7A DPAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
Rds On (Max) @ Id, Vgs | 3.7 Ohm @ 850mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD2N30TM
ONSEMICON
6515
0.54
Xinye International Technology Limited
FQD2N30TM
ON/ST
3935
1.3775
MY Group (Asia) Limited
FQD2N30TM
ON/CMD
2947
2.215
Ruised Technology (HONGKONG) LIMITED
FQD2N30
ON/SANYO
4251
3.0525
Ande Electronics Co., Limited
FQD2N30
ONSEM
9645
3.89
Yingxinyuan INT'L (Group) Limited