Part Number | FQD2N100TF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 1000V 1.6A DPAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 9 Ohm @ 800mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FQD2N100TF
ONSEMICON
16000
0.46
Finestock Electronics HK Limited
FQD2N100TF
ON/ST
18650
1.33
Fairstock HK Limited
FQD2N100TF
ON/CMD
1000
2.2
MY Group (Asia) Limited
FQD2N100TF
ON/SANYO
4000
3.07
KK Wisdom Limited
FQD2N100TF
ONSEM
20000
3.94
Yingxinyuan INT'L (Group) Limited